IndiumV3, Chine, Analysis, bibRecord, 000427

Rational Design of Amorphous Indium Zinc Oxide/Carbon Nanotube Hybrid Film for Unique Performance Transistors

Identifieur interne : 000427 ( Chine/Analysis ); précédent : 000426; suivant : 000428

Rational Design of Amorphous Indium Zinc Oxide/Carbon Nanotube Hybrid Film for Unique Performance Transistors

Auteurs : RBID : Pascal:12-0312744

Descripteurs français

Pascal (Inist)
- Oxyde d'indium, Oxyde de zinc, Nanotube carbone, Matériau hybride, Transistor couche mince, Procédé sol gel, Carbone, Film complexe, Couche mince, Matériau composite, Flexibilité, Charge dynamique, Stabilité mécanique, Propriété mécanique, Oxyde de carbone, Nanotube monofeuillet, Flexion, 8107D, 8535, 8530T, 6225.
Wicri :
- concept : Carbone, Matériau composite.

English descriptors

KwdEn :
- Bending, Carbon, Carbon nanotubes, Carbon oxides, Composite film, Composite materials, Dynamic loads, Flexibility, Hybrid material, Indium oxide, Mechanical properties, Mechanical stability, Singlewalled nanotube, Sol-gel process, Thin film transistors, Thin films, Zinc oxide.

Abstract

Here we report unique performance transistors based on sol-gel processed indium zinc oxide/single-walled carbon nanotube (SWNT) composite thin films. In the composite, SWNTs provide fast tracks for carrier transport to significantly improve the apparent field effect mobility. Specifically, the composite thin film transistors with SWNT weight concentrations in the range of 0-2 wt % have been investigated with the field effect mobility reaching as high as 140 cm²/V.s at 1 wt % SWNTs while maintaining a high on/off ratio ∼10⁷. Furthermore, the introduction SWNTs into the composite thin film render excellent mechanical flexibility for flexible electronics. The dynamic loading test presents evidently superior mechanical stability with only 17% variation at a bending radius as small as 700 μm, and the repeated bending test shows only 8% normalized resistance variation after 300 cycles of folding and unfolding, demonstrating enormous improvement over the basic amorphous indium zinc oxide thin film. The results provide an important advance toward high-performance flexible electronics applications.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 001A35
to stream Main, to step Repository: 001630
to stream Chine, to step Extraction: 000427

Links to Exploration step

Pascal:12-0312744

Le document en format XML

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<author><name>XINGQIANG LIU</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University</s1>
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<country>République populaire de Chine</country>
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<author><name>CHUNLAN WANG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University</s1>
<s2>Wuhan 430072</s2>
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<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University</s1>
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<author><name>XIANGHENG XIAO</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University</s1>
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<author><name>SHISHANG GUO</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University</s1>
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<author><name>ZHIYONG FAN</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Electronic & Computer Engineering, Hong Kong University of Science & Technology</s1>
<s3>HKG</s3>
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<country>Hong Kong</country>
<wicri:noRegion>Department of Electronic & Computer Engineering, Hong Kong University of Science & Technology</wicri:noRegion>
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<author><name>JINCHAI LI</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University</s1>
<s2>Wuhan 430072</s2>
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</author>
<author><name>XIANGFENG DUAN</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Chemistry and Biochemistry, University of California</s1>
<s2>Los Angeles, California 90095</s2>
<s3>USA</s3>
<sZ>8 aut.</sZ>
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<country>États-Unis</country>
<wicri:noRegion>Los Angeles, California 90095</wicri:noRegion>
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<author><name>LEI LIAO</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University</s1>
<s2>Wuhan 430072</s2>
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<publicationStmt><idno type="inist">12-0312744</idno>
<date when="2012">2012</date>
<idno type="stanalyst">PASCAL 12-0312744 INIST</idno>
<idno type="RBID">Pascal:12-0312744</idno>
<idno type="wicri:Area/Main/Corpus">001A35</idno>
<idno type="wicri:Area/Main/Repository">001630</idno>
<idno type="wicri:Area/Chine/Extraction">000427</idno>
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<seriesStmt><idno type="ISSN">1530-6984</idno>
<title level="j" type="abbreviated">Nano lett. : (Print)</title>
<title level="j" type="main">Nano letters : (Print)</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Bending</term>
<term>Carbon</term>
<term>Carbon nanotubes</term>
<term>Carbon oxides</term>
<term>Composite film</term>
<term>Composite materials</term>
<term>Dynamic loads</term>
<term>Flexibility</term>
<term>Hybrid material</term>
<term>Indium oxide</term>
<term>Mechanical properties</term>
<term>Mechanical stability</term>
<term>Singlewalled nanotube</term>
<term>Sol-gel process</term>
<term>Thin film transistors</term>
<term>Thin films</term>
<term>Zinc oxide</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Oxyde d'indium</term>
<term>Oxyde de zinc</term>
<term>Nanotube carbone</term>
<term>Matériau hybride</term>
<term>Transistor couche mince</term>
<term>Procédé sol gel</term>
<term>Carbone</term>
<term>Film complexe</term>
<term>Couche mince</term>
<term>Matériau composite</term>
<term>Flexibilité</term>
<term>Charge dynamique</term>
<term>Stabilité mécanique</term>
<term>Propriété mécanique</term>
<term>Oxyde de carbone</term>
<term>Nanotube monofeuillet</term>
<term>Flexion</term>
<term>8107D</term>
<term>8535</term>
<term>8530T</term>
<term>6225</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Carbone</term>
<term>Matériau composite</term>
</keywords>
</textClass>
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<front><div type="abstract" xml:lang="en">Here we report unique performance transistors based on sol-gel processed indium zinc oxide/single-walled carbon nanotube (SWNT) composite thin films. In the composite, SWNTs provide fast tracks for carrier transport to significantly improve the apparent field effect mobility. Specifically, the composite thin film transistors with SWNT weight concentrations in the range of 0-2 wt % have been investigated with the field effect mobility reaching as high as 140 cm<sup>2</sup>
/V.s at 1 wt % SWNTs while maintaining a high on/off ratio ∼10<sup>7</sup>
. Furthermore, the introduction SWNTs into the composite thin film render excellent mechanical flexibility for flexible electronics. The dynamic loading test presents evidently superior mechanical stability with only 17% variation at a bending radius as small as 700 μm, and the repeated bending test shows only 8% normalized resistance variation after 300 cycles of folding and unfolding, demonstrating enormous improvement over the basic amorphous indium zinc oxide thin film. The results provide an important advance toward high-performance flexible electronics applications.</div>
</front>
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<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1530-6984</s0>
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<fA08 i1="01" i2="1" l="ENG"><s1>Rational Design of Amorphous Indium Zinc Oxide/Carbon Nanotube Hybrid Film for Unique Performance Transistors</s1>
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<fA11 i1="01" i2="1"><s1>XINGQIANG LIU</s1>
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<fA11 i1="02" i2="1"><s1>CHUNLAN WANG</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>BO CAI</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>XIANGHENG XIAO</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>SHISHANG GUO</s1>
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<fA11 i1="06" i2="1"><s1>ZHIYONG FAN</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>JINCHAI LI</s1>
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<fA11 i1="08" i2="1"><s1>XIANGFENG DUAN</s1>
</fA11>
<fA11 i1="09" i2="1"><s1>LEI LIAO</s1>
</fA11>
<fA14 i1="01"><s1>Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University</s1>
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<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<sZ>5 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>9 aut.</sZ>
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<fA14 i1="02"><s1>Department of Electronic & Computer Engineering, Hong Kong University of Science & Technology</s1>
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<fA14 i1="03"><s1>Department of Chemistry and Biochemistry, University of California</s1>
<s2>Los Angeles, California 90095</s2>
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<fA20><s1>3596-3601</s1>
</fA20>
<fA21><s1>2012</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
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<fA43 i1="01"><s1>INIST</s1>
<s2>27369</s2>
<s5>354000504036340410</s5>
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<fA44><s0>0000</s0>
<s1>© 2012 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>26 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>12-0312744</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Nano letters : (Print)</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Here we report unique performance transistors based on sol-gel processed indium zinc oxide/single-walled carbon nanotube (SWNT) composite thin films. In the composite, SWNTs provide fast tracks for carrier transport to significantly improve the apparent field effect mobility. Specifically, the composite thin film transistors with SWNT weight concentrations in the range of 0-2 wt % have been investigated with the field effect mobility reaching as high as 140 cm<sup>2</sup>
/V.s at 1 wt % SWNTs while maintaining a high on/off ratio ∼10<sup>7</sup>
. Furthermore, the introduction SWNTs into the composite thin film render excellent mechanical flexibility for flexible electronics. The dynamic loading test presents evidently superior mechanical stability with only 17% variation at a bending radius as small as 700 μm, and the repeated bending test shows only 8% normalized resistance variation after 300 cycles of folding and unfolding, demonstrating enormous improvement over the basic amorphous indium zinc oxide thin film. The results provide an important advance toward high-performance flexible electronics applications.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B80A07D</s0>
</fC02>
<fC02 i1="02" i2="X"><s0>001D03F18</s0>
</fC02>
<fC02 i1="03" i2="X"><s0>001D03F04</s0>
</fC02>
<fC02 i1="04" i2="3"><s0>001B60B25</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Oxyde d'indium</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Indium oxide</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Indio óxido</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Oxyde de zinc</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Zinc oxide</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Zinc óxido</s0>
<s5>02</s5>
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<fC03 i1="03" i2="3" l="FRE"><s0>Nanotube carbone</s0>
<s5>03</s5>
</fC03>
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<s5>03</s5>
</fC03>
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<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Hybrid material</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Material híbrido</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Transistor couche mince</s0>
<s5>05</s5>
</fC03>
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<s5>05</s5>
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<s5>06</s5>
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<s5>06</s5>
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<fC03 i1="07" i2="3" l="FRE"><s0>Carbone</s0>
<s2>NC</s2>
<s5>07</s5>
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<s2>NC</s2>
<s5>07</s5>
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<s5>08</s5>
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<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Película compleja</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Couche mince</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Thin films</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Matériau composite</s0>
<s5>10</s5>
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<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Flexibilité</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Flexibility</s0>
<s5>11</s5>
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<s5>12</s5>
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<s5>12</s5>
</fC03>
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<s5>13</s5>
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<s5>13</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Propriété mécanique</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Mechanical properties</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Oxyde de carbone</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Carbon oxides</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Nanotube monofeuillet</s0>
<s5>16</s5>
</fC03>
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<s5>16</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Flexion</s0>
<s5>29</s5>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>Bending</s0>
<s5>29</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>8107D</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>8535</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>8530T</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>6225</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fN21><s1>240</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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Rational Design of Amorphous Indium Zinc Oxide/Carbon Nanotube Hybrid Film for Unique Performance Transistors

Rational Design of Amorphous Indium Zinc Oxide/Carbon Nanotube Hybrid Film for Unique Performance Transistors

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